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Calculate the position of the Fermi energy level in n-type silicon at \( T=300 \mathrm{~K} \) with respect to the intrinsic Fermi energy level. The doping concentrations are \( N_{d}=2 \times 10^{17} \mathrm{~cm}^{-3} \) and \( N_{a}=3 \mathrm{x} \) \( 10^{16} \mathrm{~cm}^{-3} \).