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5. Determine the electron and hole thermal equilibrium densities and the location of the Fermi level \( E_{F} \), with respect to \( E_{c r} \), for a semiconductor sample at \( 300 \mathrm{~K} \) that is \( \mathrm{cO}^{-} \) doped with \( 3 \times 10^{12} \mathrm{~cm}^{-3} \) of acceptors and \( 2.9 \times 10^{12} \mathrm{~cm}^{-3} \) of donors. The band gap energy of the material is \( 1.0 \mathrm{eV} \) and the intrinsic carrier density is \( 10^{11} \mathrm{~cm}^{-3}(20 \mathrm{pts}) \)