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# (Solved): Effect of impurities on conduction Given a semiconductor doped with impuritie ... ???????

Effect of impurities on conduction Given a semiconductor doped with impurities acceptor $$N_{A}=10^{16} \mathrm{~cm}^{-3}$$. It has a square section with a side of $$2.5 \mu \mathrm{m}$$ and a length of $$12 \mu \mathrm{m}$$. Charge carriers have a lifetime of $$1.5 \mu s$$ and mobility is $$\mu_{n}=600 \mathrm{~cm} / V s$$ and $$\mu_{p}=180 \mathrm{~cm} / \mathrm{Vs}$$. 1. Calculate the theoretical resistance of this sample. 2. The sample is observed to have a much higher resistance than expected. It is assumed that there is a metal atom contamination of the sample that generates $$10^{10}$$ levels of recombination per $$\mathrm{cm}^{-3}$$. These levels are found at $$E_{t}=E_{i}$$. It results in a reduction of the lifetime to $$100 \mathrm{~ns}$$. Based on these hypotheses, calculate again the resistance of the sample. 3. In order to reduce the effect of impurities, the sample is placed under a light source. This source has a generation rate $$G=G_{n}=G_{p}=10^{20}$$. Calculate the resistance again.

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