Home /
Expert Answers /
Electrical Engineering /
effect-of-impurities-on-conduction-given-a-semiconductor-doped-with-impuritie-pa400

???????

Effect of impurities on conduction Given a semiconductor doped with impurities acceptor \( N_{A}=10^{16} \mathrm{~cm}^{-3} \). It has a square section with a side of \( 2.5 \mu \mathrm{m} \) and a length of \( 12 \mu \mathrm{m} \). Charge carriers have a lifetime of \( 1.5 \mu s \) and mobility is \( \mu_{n}=600 \mathrm{~cm} / V s \) and \( \mu_{p}=180 \mathrm{~cm} / \mathrm{Vs} \). 1. Calculate the theoretical resistance of this sample. 2. The sample is observed to have a much higher resistance than expected. It is assumed that there is a metal atom contamination of the sample that generates \( 10^{10} \) levels of recombination per \( \mathrm{cm}^{-3} \). These levels are found at \( E_{t}=E_{i} \). It results in a reduction of the lifetime to \( 100 \mathrm{~ns} \). Based on these hypotheses, calculate again the resistance of the sample. 3. In order to reduce the effect of impurities, the sample is placed under a light source. This source has a generation rate \( G=G_{n}=G_{p}=10^{20} \). Calculate the resistance again.

To calculate the theoretical resistance of the sample, we can use the formula: ? R=(Ln?A) \where L is the length of the sample, n is the concentration